Organic CMOS technology by dielectric interface engineering, Fachbücher von Niels Benson
Complementary metal oxide semiconductor (CMOS) technology, comprised of unipolar n- and p-type field effect transistors, has ... Mehr erfahren
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Complementary metal oxide semiconductor (CMOS) technology, comprised of unipolar n- and p-type field effect transistors, has proven to yield circuits with low power consumption and high tolerance against device variations and noise. For organic electronic applications, however, the implementation of this technology has been hampered by the generally accepted idea of exclusive unipolar properties for organic semiconductors and their incompatibility with classical lithography. It is therefore highly desirable to control the polarity of organic field effect transistors (OFETs) by means other than the deposition of spatially separated semiconductors. The work at hand provides a solution to this challenge. It is demonstrated that, depending on the presence of electronic states at the dielectric interface, balanced unipolar n-, p-type or ambipolar behavior in one and the same organic semicondu.
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Lieferzeit:2-4 Werktage
Marke:Südwestdeutscher